mur3040, MUR3060 mur3040 MUR3060 v rsm v 400 600 v rrm v 400 600 symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =85 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 70 37 375 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 300 320 260 280 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 450 420 340 320 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 125 0.8...1.2 6 w nm weight g dimensions to-247ac a=anode, c=cathode, tab=cathode c a c a c(tab) dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 ultra fast recovery diodes typical p1 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
mur3040, MUR3060 advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-247ac * planar passivatd chips * very short recovery time * extremely low switching losses * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 100 50 7 ua ua ma i r i f =37a; t vj =150 o c t vj =25 o c 1.4 1.6 v v f r thjc r thck r thja 1 35 k/w 0.25 v r =350v; i f =30a; -di f /dt=240a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=100a/us; v r =30v; t vj =25 o c ns i rm a 35 v to for power-loss calculations only 1.01 v r t 7.1 m t vj =t vjm 50 10 _ 11 ultra fast recovery diodes * rohs complian t p2 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
mur3040, MUR3060 fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. ultra fast recovery diodes p3 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
|
